Metal heterojunction structure with capping metal layer

ABSTRACT

The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

BACKGROUND

Transistors are building blocks for integrated circuits. A transistorgenerally comprises a semiconductor substrate, a channel layer above orwithin the semiconductor substrate, a gate oxide layer and a gate stackabove the channel layer, and source and drain diffusion regions on or inthe surface of the semiconductor substrate. Electrical contacts are madeto the gate stack, and to the source and drain diffusion regions of thetransistor. On top of the transistors, a plurality of layers of metallines, formed with copper, aluminum, tungsten or cobalt, on differentplanes, are routed for signal transmission among transistors. The planeswhere the metal lines reside are separated by inter-metal dielectriclayers. Metal lines on different planes are connected through metalinterconnect structures formed through the respective inter-metaldielectric layer. The metal interconnect structures may be generallyformed with tungsten (W) or cobalt (Co).

In forming the metal interconnect structures, a chemical mechanicalpolishing (CMP) process is conducted to remove the excessive metal filmon top of the inter-metal dielectric layer. The metal CMP processutilizes a CMP slurry that includes a mechanical abrasion component, anoxidizer(s) and/or an optional chemical metal etching component(s). Theexcessive metal film is oxidized by the oxidizer(s) so that the oxidizedmetal film can be removed by mechanical abrasion and/or chemicaletching.

Various oxidizing metal salts, metal complexes and nonmetallic oxidizingacids have been used as oxidizers in metal CMP slurries. Examplesinclude periodic acids, nitrates, sulfates, citrates, potassiumferricyanide, potassium bromate, potassium iodate, hydrogen peroxide,ferric nitrate, calcium hypochlorite, and dichromate and otheroxidizers.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. In thedrawings, identical reference numbers identify similar elements or actsunless the context indicates otherwise. The sizes and relative positionsof elements in the drawings are not necessarily drawn to scale. In fact,the dimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 shows an example semiconductor structure according to embodimentsof the disclosure;

FIGS. 2A-2D show alternative embodiments to the semiconductor structureof FIG. 1;

FIG. 3 shows an example fabrication process according to embodiments ofthe disclosure; and

FIGS. 4A-4G show, in cross-sectional views, an example wafer in variousstages of the fabrication process of FIG. 3.

DETAILED DESCRIPTION

Various embodiments described herein are based on several observations.One observation is that in the back-end-of-line “BEOL” metallizationdesign of semiconductor structures, the contact structures (e.g., themetal or conductive structures contacting the silicon layers), the localmetal lines, the global metal lines, and the contact plugs (contact via)and/or other conductive connection structures are often made ofdifferent metal or metal compound materials. In the description herein,the term “metal interconnect structure” is used to refer to any suchcontact structures, metal lines, contact plugs, or other connectionstructures formed in the BEOL processes. In the semiconductor industry,the term “MOL” is sometimes used to refer to processes of gate contactand/or source/drain contact formation, although the term “BEOL” isgenerally used to refer to any wafer processes after the FEOL processes,i.e., the semiconductor fabrication processes. For descriptive purposes,in the descrption herein, the term “BEOL” is used to refer to any waferprocesses after the FEOL processes, which includes the scenarios of the“MOL”. Chemical mechanical polishing processes are used to polish andplanarize those metal interconnect structures to remove excessive metalmaterials in the deposition of the metal interconnect structures, e.g.,unwanted or undesired portions of the metal film used to form metalinterconnect structures. In the CMP process of a first interconnectstructure, the metal CMP slurry including the oxidizer contained in theCMP slurry may penetrate and travel through the interface between thefirst metal interconnect structure and the inter-metal dielectric layeraround the first metal interconnect structure to reach a secondinterconnect structure that is underlying the first metal interconnectstructure and is connected to the first metal interconnect structure. Asa consequence, the underlying second metal interconnect structure may beoxidized, and may corrode or decay due to the direct contact with theoxidizer and the chemical solutions having an acidic (i.e., pH value<7)or alkaline property (i.e., pH value>7). Such oxidation, corrosion ordecay cause connection failures and/or manufacturing yield loss. Thisissue becomes even more predominant with the technology nodes becomingsmaller and approaching or reaching the sub-10 nm level. For example, inthe sub-10 nm technologies, there may not be space allowance for a linerlayer to be positioned between a metal interconnect structure and thesurrounding inter-metal dielectric layer. The lack of liner layergenerally means that the underlying second metal interconnect structuresare more susceptible to the negative effects of oxidizer penetrationbecause of the gap in the interface between the first metal interconnectstructure and the surrounding dielectric layer.

Further, the underlying second interconnect structure may include adifferent metal material from the first interconnect structure, whichmakes it more difficult to protect both the first interconnect structureand the second interconnect structure in the scenario of oxidizerpenetration. For example, a tungsten contact plug (via) structure mayconnect two layers of cobalt or copper metal lines. In another example,a cobalt interconnect structure may be formed between, and connect, twolayers of tungsten or aluminum metal lines. Copper and cobalt moreeasily suffer from dissolution or other degradation issues in acidic CMPsolutions that contain oxidizers. On the other hand, tungsten moreeasily suffers from dissolution or other degradation in alkaline CMPsolutions that contain oxidizer. The different metals in the adjacentinterconnect structures, and their different reactions to the CMPslurries make it difficult to protect the underlying metal interconnectstructures from the CMP slurry used for polishing an upper metalinterconnect structure.

Another observation is that in the CMP process to polish a metalinterconnect structure together with an inter-metal dielectric layersurrounding the metal interconnect structure, the polish rates of themetal material and the dielectric material are different, which mayresult in a recess formed between the upper surface of the interconnectstructure and the dielectric layer, i.e., the upper surface of theinterconnect structure is lower than the surrounding dielectric layer.Such a recess will make it challenging to form a satisfactory connectionbetween the interconnect structure and an upper interconnect structure.For example, the recess may be translated into a gap area in theconnection interface between the underlying interconnect structure andthe upper interconnection. The gap area makes the underlyinginterconnect structure more vulnerable to CMP chemicals from a CMPprocess polishing of the upper interconnect structure that penetrate tothe gap area because the CMP chemicals will accumulate in the gap areawhere they can react with the underlying interconnect structure.

Various embodiments of the disclosed techniques form a metal capstructure to fill a recess area formed by an upper surface of a firstinterconnect structure and the surrounding dielectric layer. In formingthe metal cap structure, measures are taken to protect the firstinterconnect structure from being damaged from contact with a CMP slurryused to polishing the layers formed over the first interconnectstructure. In an embodiment, the metal cap structure is formed through alift-off process such that there is no excessive metal material to beremoved by a CMP process. As such, the first interconnect structure willnot contact a CMP slurry and the first interconnect structure will notbe damaged. Alternatively and/or additionally, an upper surface portionof the dielectric layer is strained, e.g., by ion implanting, such thattensile stress is introduced into the upper surface portion of thedielectric layer. More specifically, the volume of this expanded uppersurface portion of the dielectric layer is increased. Increasing thevolume of the upper surface portion of the dielectric has severalbenefits depending on the specific situation. For example, if a gapexists in the interface between the upper surface portion of thedielectric layer and the metal cap structure, increasing the volume ofthe upper surface portion will result in the upper surface portionexpanding to make the gap smaller or close the gap. In another example,if little or no gap exists at the interface, increasing the volume ofthe upper surface portion will result in closing of the gap and theexertion of a compressive force by the upper surface portion of thedielectric layer on the metal cap structure. In still another example,where no gap exists in the interface, causing the upper surface portionto expand results in an increase in compressive force exerted by theupper surface portion of the dielectric layer on the metal capstructure. Each of the above results from the straining of the upperportion of the dielectric material which causes the upper portion toexpand towards and in some instances compress against the the capstructure with an increased force, which will reduce the permeation ofchemical solutions through the materials around the interface betweenthe dielectric layer and the metal cap structure or penetration ofchemical solutions through the interface to reach the first interconnectstructure.

In an embodiment, the metal cap structure is a same metal material as asecond upper interconnect structure or is a metal material that is asame type of metal material as the second interconnect structure withrespect to the materials reacting to or with a CMP slurry used inpolishing the second interconnect structure. As such, the metal capstructure will not be unduly damaged by the CMP slurry of the secondinterconnect structure should it come in contact with the CMP slurry orthe reaction between the metal cap structure and the CMP slurry of thesecond interconnection structure is well controlled or compensated forin the process or device design. That is, the reaction between the capstructure and the CMP slurry of the second interconnect structure issimilar to the reaction between the second interconnect structure andthe CMP slurry. As such, the reaction between the cap structure and theCMP slurry of the second interconnect structure could be well controlledin the respective CMP process. The metal cap structure prevents the CMPslurry used to polish the second interconnect structure from reachingthe underlying interconnect structure. Therefore, the underlying firstinterconnect structure will not be damaged by coming in contact with theCMP slurry used to planarize the upper second interconnect structure.Further, the metal cap structure also fills the unintentionally formedrecess on the upper surface of the first interconnect structure, whichhelps to form a desirable electrical connection between the underlyingfirst interconnect structure and the upper second interconnectstructure.

In an embodiment, a semiconductor structure includes a semiconductordevice formed over a substrate and a lower-level interconnect structureconnected to one of the terminals of the semiconductor device, e.g.,source, drain, gate, or body (ground) of a transistor. A metal capstructure is formed over the lower-level interconnect structure. Anupper surface of the metal cap structure is substantially at a samelevel as a lower-level inter-metal dielectric layer that surrounds thelower-level interconnect structure. An upper portion of the lower-levelinter-metal dielectric layer is doped to strain this upper portion suchthat the upper portion has a tensile stress that applies a force againstan interface between the lower-level inter-metal dielectric layer.Specifically, for example, the volume of the upper portion is increasedand in some embodiments a compressive force exerted by this upperportion of the lower-level inter-metal dielectric on the metal capstructure, i.e., in a direction toward the metal cap structure isincreased. An upper-level interconnect structure is formed over themetal cap structure and is surrounded by an upper-level inter-metaldielectric layer. In an embodiment, the metal cap structure includes asame metal material or a same type of metal materials as the up-levelinterconnect structure. In an embodiment, the metal cap structureincludes a different metal material from the lower-level interconnectstructure.

The disclosure herein provides many different embodiments, or examples,for implementing different features of the described subject matter.Specific examples of components and arrangements are described below tosimplify the present description. These are, of course, merely examples,and are not intended to be limiting. For example, the formation of afirst feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In the following description, certain specific details are set forth inorder to provide a thorough understanding of various embodiments of thedisclosure. However, one skilled in the art will understand that thedisclosure may be practiced without these specific details. In otherinstances, well-known structures associated with electronic componentsand fabrication techniques have not been described in detail to avoidunnecessarily obscuring the descriptions of the embodiments of thepresent disclosure.

Unless the context requires otherwise, throughout the specification andclaims that follow, the word “comprise” and variations thereof, such as“comprises” and “comprising,” are to be construed in an open, inclusivesense, that is, as “including, but not limited to.”

The use of ordinals such as first, second and third does not necessarilyimply a ranked sense of order, but rather may only distinguish betweenmultiple instances of an act or structure.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure or characteristicdescribed in connection with the embodiment is included in at least oneembodiment. Thus, the appearances of the phrases “in one embodiment” or“in an embodiment” in various places throughout this specification arenot necessarily all referring to the same embodiment. Furthermore, theparticular features, structures, or characteristics may be combined inany suitable manner in one or more embodiments.

As used in this specification and the appended claims, the singularforms “a,” “an,” and “the” include plural referents unless the contentclearly dictates otherwise. It should also be noted that the term “or”is generally employed in its sense including “and/or” unless the contentclearly dictates otherwise.

FIG. 1 shows an example structure 100. Referring to FIG. 1, thestructure 100 includes a substrate 110, e.g., a silicon substrate, and adevice 120 formed over the substrate. The device 120 is illustrativelyshown as a transistor device having a gate 122, a source/drain region124 and a body 126. A first interconnect structure 130 that contacts oneof the gate 122, source/drain 124 or the body 126 (e.g., through thesubstrate 110) is formed within a first dielectric layer 132. An uppersurface 130S of the first interconnect structure 130 is lower than anupper surface 132S of the first dielectric layer 132. A recess 134 isformed between the upper surface 130S of the first interconnectstructure 130 and the upper surface 132S of the first dielectric layer132. Specifically, the recess 134 is positioned within the firstdielectric layer 132 and over the upper surface 130S of the firstinterconnect structure 130.

A metal cap layer 140 is formed within the recess 134 and covers theupper surface 130S of the first interconnect structure 130 that isexposed from the recess 134. In an embodiment, the metal cap structure140 has a different metal or metal compound material from that of thefirst interconnect structure 130. An upper portion 132U of thedielectric layer 132 is strained, e.g., by being doped, to have atensile stress. The tensile stress causes the upper portion 132U ofdielectric layer 132 to expand and increase in volume in a direction ofcap structure 140 and in some embodiments increase a compressive forceupper portion 132U exerts against metal cap layer 140 when strainedupper portion 132U of dielectric layer 132 contacts cap structure 140,as illustrated with arrows 136. The increased volume of upper portion132U cause the dielectric material of the upper portion 132U to expandtowards the metal cap structure 140 such that a gap, if any, at theinterface 142 between the first dielectric layer 132, specifically theupper portion 132U, and the metal cap structure 140 is reduced in sizeor eliminated. In accordance with embodiments where the gap is small,i.e., of a dimension that is less than the amount upper portion 132Uexpands after being doped, the expansion of upper portion 132U resultsin the gap being closed and a compressive force being exerted by upperportion 132U on metal cap structure 140. In accordance with otherembodiments where a gap does not exist, expansion of upper portion 132Uresults in increased compressive forces 136 being exerted by thedielectric material of the upper portion 132U on the metal cap structure140. Closing of the gap and/or the increased compressive force exertedby the dielectric material of the upper portion 132U on the metal capstructure 140 reduces the risk that materials detrimental to theunderlying first interconnect structure, e.g., a CMP solution used toplanarize an upper second interconnect structure, will reach theunderlying first interconnect structure.

A second interconnect structure 150 is formed over the cap structure 140and contacts the cap structure 140. In an embodiment, the secondinterconnect structure 150 has a same conductive material as the capstructure 140. In another embodiment, a material of the secondinterconnect structure 150 is a same type of metal or metal compoundmaterial as the cap structure 140 such that the cap structure 140 andthe second interconnect structure 150 react similarly to a CMP chemicalsolution they contact. For example, copper and cobalt are a same type ofmetal material in that the two materials both suffer from dissolution orother degradation issues in acidic CMP solutions and are both resistiveto dissolution or other degradation by alkaline CMP solutions. On theother hand, cobalt and tungsten are different types of metal materialsbecause tungsten suffers from dissolution or other degradation issues inalkaline CMP solutions and is resistive to dissolution or otherdegradation by acidic CMP solutions. Embodiments of the presentdisclosure are not limited to copper, cobalt and tungsten and in otherembodiments the metal materials are metal materials other than copper,cobalt and tungsten. In an illustrative example, the first interconnectstructure 130 is cobalt, and the cap structure 140 and the secondinterconnect structure 150 are tungsten.

The device 120 is illustratively shown as a field effect transistor,which does not limit the scope of the disclosure. Other devices, likebipolar devices or tunnel field effect transistors, are also possibleand included in the disclosure. The first interconnect structure 130 isillustratively shown as a contact structure to the device, specificallyto the source/drain region 124, which is not limiting. The firstinterconnect structure may be any metal interconnect structures that arepositioned below another metal interconnect structure.

In an embodiment, as shown in FIG. 1, the metal cap structure 140substantially aligns with the upper surface 130S of the firstinterconnect structure 130. Further, an upper surface 140S of the capstructure 140 is substantially at a same level as the upper surface 132Sof the dielectric layer 132. However, the disclosure is not limited bythis example profile of the cap structure 140 relative to the uppersurface 130S of the first interconnect structure 130 or the uppersurface 132S of the dielectric layer 132.

FIGS. 2A to 2D show alternative embodiments of the cap structure 140.The alternative embodiments each include some similar structuralfeatures as the structure 100 of FIG. 1, the descriptions of which areomitted for simplicity purposes. In the alternative embodiment shown inFIG. 2A, the cap structure 240(A) fully covers the first interconnectstructure 130 and also laterally extends, at least in some directions,beyond the surface 130S of the first interconnect structure 130 andcovers a portion of dielectric layer 132 around cap structure 240(A).That is, the cap structure 240(A) extends laterally beyond the firstinterconnect structure 130 at least in one direction.

In the alternative embodiment shown in FIG. 2B, the cap structure 240(B)misaligns with and partially overlaps the first interconnect structure130, but does not fully overlap the first interconnect structure 130.The cap structure 240(B) is still positioned between the firstinterconnect structure 130 and the second interconnect structure 150such that a CMP chemical solution used for polishing the secondinterconnect structure 150 will not reach the first interconnectstructure 130 below the cap structure 140. The expansion of upperportion 132U of dielectric layer 132 results in closing of the gap atthe interface between the dielectric layer 132 and cap structure 240(B)and/or increased compressive forces 136 exerted by the upper portion132S of the first dielectric layer 132 at the interface 142 between thefirst dielectric layer 132, or specifically the upper portion 132U ofthe first dielectric layer 132, and the metal cap structure 240(B). Thisclosing of the gap and/or increased compressive force in the interface142 is such that chemical solution used in the CMP process of the secondinterconnect structure 150 cannot permeate or penetrate through theinterface 142 to reach the underlying first interconnect structure 130.The first dielectric layer 132 is silicon oxide or another low-kdielectric material, e.g., dielectric constant lower than 4.

In an embodiment, the upper portion 132U of the first dielectric layer132 is a separate layer from the rest of the first dielectgric layer132. For example the upper layer 132U is silicon nitride and the rest ofthe first dielectric layer 132 is silicon oxynitride SiOxNy or otherlow-k dielectric materials. The thickess of the upper portion 132U ofsilicon nitride is relatively small, e.g., between about 15 Å to about25 Å such that the overall dielectric constant value of the combinationof the first dielectric layer 132 including the upper silicon nitrideportion 132U and the silicon oxynitride of the rest of the layer 132 isstill relatively low.

The tensile stress within the upper portion 132U may be enhanced byforming the upper portion 132U, e.g., of silicon nitride, with multiplelayers in a plurality of successive deposition and/or treatment cycles.The residual tensile stress may also be incorporated by deposting thesilicon nitride 132U with a lower temperature, e.g., about 400° C. to450° C., prior to subsequent radiation curing. The tensile stress withinthe upper portion 132U may also be enhanced by incorporation of variousdopants, e.g., Zr or Mg dopants or other suitable dopants. For a siliconoxide upper portion 132U, the tensile stress may be enhanced withincorporation of dopants like one or more of germanium “Ge,” silicon“Si,” carbon “C,” nitrogen “N,” phosphorus “P,” or boron “B.”

In the alternative embodiment shown in FIG. 2C, the cap structure 240(C)extends upward beyond the first dielectric layer 132. Specifically, anupper surface 240S of the cap structure 240(C) is higher than the uppersurface 132S of the first dielectric layer 132. In an embodiment, athird dielectric layer 242 is positioned between the first dielectriclayer 132 and the second dielectric layer 152. The third dielectriclayer 242 may include a same dielectric material as one or more of thefirst dielectric layer 132 or the second dielectric layer 152, or mayinclude a different dielectric material from either of them. In anembodiment, the third dielectric layer 242 may be strained by one ormore of being formed with a residual tensile stress or being doped withan impuroity to enhance tensile stress. The tensile stress within thethird dielectric layer 242 causes third dielectric layer 242 to expandin a direction of cap structure 240(C) and close a gap at the interfacebetween third dielectric layer 242 and cap structure 240(C) and/orincrease a compressive force exerted by third dielectric layer 242 oncap structure 240(C) when modified third dielectric layer 242 contactscap structure 240(C).

For example, the third dielectric layer 242 is silicon nitride. Thetensile stress within the silicon nitride layer 242 may be enhanced byforming the layer 242 nitride material with multiple layers in aplurality of successive deposition and/or treatment cycles. The residualtensile stress may also be incorporated by deposting the silicon nitridelayer 242 with a lower temperature, e.g., about 400° C. to 450° C.,prior to subsequent radiation curing. The tensile stress within thesilicon nitride layer 242 may also be enhanced by incorporation ofvarious dopants, e.g., Zr or Mg dopants or other suitable dopants. For asilicon oxide layer 242, the tensile stress may be enhanced withincorporation of dopants like one or more of germanium “Ge,” silicon“Si,” carbon “C,” nitrogen “N,” phosphorus “P,” or boron “B.”

In another embodiment, the third dielectric layer 242 is not modified,e.g., by being doped, and therefore does not exhibit the expansion ofupper portion 132U of the first dielectric layer 132 which has beenmodified, e.g., by being doped. For example, the third dielectric layer242 may function, among others, as an etch stop layer.

In the alternative embodiment shown in FIG. 2D, the cap structure 240(D)includes a first portion (or a lower portion) 246 and a second portion(or a higher portion) 248. The lower portion 246 is enclosed within therecess 134 and the higher portion 248 extends upward beyond the uppersurface 132S of the first dielectric layer 132 and extends laterallybeyond, at least in some direction, the recess 134. For example, thehigher portion 248 may be formed by patterning the excessive metalmaterials deposited over the first dielectric layer 132 in a damasceneprocess. The higher portion 248 and the lower portion 246 may also beformed together through a dual damascene process.

The substrate 110 may include a silicon substrate in crystallinestructure and/or other elementary semiconductors like germanium.Alternatively or additionally, the substrate 110 may include a compoundsemiconductor such as silicon carbide, gallium arsenide, indiumarsenide, and/or indium phosphide. Further, the substrate 110 may alsoinclude a silicon-on-insulator (SOI) structure. The substrate 110 mayinclude an epitaxial layer and/or may be strained for performanceenhancement. The substrate 110 may also include various dopingconfigurations depending on design requirements as is known in the art,such as P-type substrate and/or N-type substrate and various dopedregions such as P-wells and/or N-wells.

FIG. 3 shows a flow diagram of an example fabrication process 300, whichmay be used to make one or more of the structure embodiments of FIGS. 1and 2 or other semiconductor structures. FIGS. 4A to 4G show a wafer 400in various stages of a fabrication process in making the structure 100of FIG. 1, as an example.

Referring to FIG. 3, with reference also to FIG. 4A, in exampleoperation 310, a wafer 400 is provided. The wafer 400 includes asubstrate 410, e.g., a silicon substrate, and a device 420 formed overthe substrate 410. An interconnect structure 430 is formed within adielectric layer 432 and contacts, directly or indirectly, a terminal ofthe device 420, e.g., a body, a source electrode, a drain electrode, ora gate electrode of the device 420. FIG. 4A shows as an illustrativeexample that the interconnect structure 430 is a contact structuredirectly contacting a source/drain region of the device 420, which doesnot limit the scope of the disclosure.

In the embodiment illustrated in FIG. 4A, a CMP process on the wafer 400has been completed. A CMP process normally is an integrated component ofa damascene process of forming a contact plug or a connection via. Asthe CMP process polishes the metal material of the interconnectstructure 430 and dielectric material of the first dielectric layer 432with different polish rates, the upper surface of the interconnectstructure 430 may not be perfectly planar, e.g., at the same height,with the upper surface 432S of the first dielectric layer 432. In anembodiment, the upper surface of the interconnect structure 430 includesan unintentionally formed recess portion 438, as shown in dotted line.The recess portion 438 refers to the surface of the interconnectstructure 430 being lower than the surface 432S of the first dielectriclayer 432. In another embodiment, the upper surface of the interconnectstructure 430 is unintentionally formed higher than the upper surface432S of the first dielectric layer 432.

The first interconnect structure 430 is formed of a first conductivematerial, e.g., cobalt “Co,” of a first type with respect to itsreaction to the pH characteristic of a CMP slurry. For example, cobaltis more sensitive or vulnerable to attack by acidic CMP solutionscontaining oxidizers.

In example operation 320, with reference also to FIG. 4B, a recess 439is formed by receding the upper surface of the first interconnectstructure 430. The recess 439 is formed between a receded surface 430RSof the interconnect structure 430 and the dielectric layer 432. In anembodiment, the receding of the first interconnect structure 430 isimplemented by etching. Suitable etching processes include dry etchingor selective wet etching. A dry etching process removes a materialthrough a bombardment of ions, usually a plasma of reactive gases suchas fluorocarbons, oxygen, chlorine, etc., which dislodges portions ofthe material from an exposed surface. A patterned photoresist layer maybe used in a dry etching to improve the accuracy of the removal of thematerial. A wet etching selective to the material of the exposed portionof the metal interconnect structure 430 removes a portion of the exposedinterconnect structure 430, with the dielectric layer 432 remainingsubstantially intact. Embodiments of the present disclosure are notlimited to the foregoing etching processes for receding firstinterconnect structure 430. Processes other than wet etching or dryetching may be used in to recede first interconnect structure 430 inaccordance with disclosed embodiments

In an embodiment, the formation of recess 439 is controlled such that aratio between a depth D1 and a diameter L1 of the recess 439 isrelatively small, e.g., smaller than 1.5. In some embodiments, the ratiobetween D1 and L1 is smaller than 1. This low depth versus diameterratio results in a structure formed within the recess 439 having a lowaspect ratio, which enables the use of some metal deposition routinesthat are more suitable for low aspect ratio structures. For example,physical vapor deposition (PVD), chemical vapor deposition (CVD), atomiclayer deposition (ALD) or the like are more suitable for forming lowaspect ratio structures than high aspect ratio structures. The PVD, CVD,ALD deposition processes all have good gap-fill characteristics, whichcan be advantageously used in forming the cap structure 140 of FIG. 1 asdiscussed herein. In an embodiment, the diameter L1 is within a rangebetween about 2 nm to about 5 nm and the depth D1 is within a rangebetween about 2 nm to about 4 nm. Embodiments of the present disclosureare not limited to the foregoing aspect ratios, L1 and D1. In accordancewith other embodiments of the present disclosure the aspect ratio, L1and D1 may different than the values and ranges expressly describedabove.

FIG. 4B shows one example embodiment of intentionally forming the recess439 in-situ, which does not limit the scope of the disclosure. Therecess 439 may also be formed through other processes, which are allincluded in the disclosure. For example, as shown in FIG. 4B(1), anadditional dielectric layer 432A is formed over the dielectric layer432, and is patterned to form an aperture 439A exposing the firstinterconnect structure 430. The aperture 439A and the upper surface 430Sof the interconnect structure 430 form the recess 439.

In a further embodiment, the example operation 320 is not conducted andthe recess 439 is not intentionally formed. The recess 438, as anaturally or unintentionally formed recess portion between the uppersurface of the first interconnect structure 430 and the first dielectriclayer 432, is used in subsequent fabrication processes without furthermodification. As such, subsequent references to the recess 439 may referto either the unintentionally formed recess 438 or the intentionallyformed recess 439.

In a further embodiment, as shown in FIG. 4B(2), a dual damasceneprocess is used to form a staggered aperture 439B through two additionaldielectric layers 432A, 432B. The staggered aperture 439B is suitablefor forming the example cap structure of FIG. 2D. Note that there may beetch stop layers between the adjacent dielectric layers 432, 432A, 432Bto facilitate the formation of the apertures 439A, 439B, which areomitted for simplicity purposes.

In example operation 330, with reference also to FIG. 4C, a capstructure 440 is formed within the recess 439. In an embodiment, the capstructure 440 is a conductive material different from the conductivematerial of the first interconnect structure 430. In an example, thematerial of the cap structure 440 is a different type (second type) ofconductive material with respect to its reaction to the pHcharacteristic of a metal CMP slurry. For example, tungsten “W” is moresensitive or vulnerable to alkaline CMP solutions containing oxidizers,which is different that the sensitivity of cobalt or copper to alkalineCMP solutions. Aluminum is similar to tungsten with respect to itsreaction to the pH characteristics of a metal CMP slurry. In anembodiment, the cap structure 440 is tungsten.

The cap structure 440 is formed under one of the damascene process orthe lift-off process. Depending on the specific formation process, a CMPoperation 332 may be included in the operation 330 in the formation ofthe cap structure 440. For example, if a damascene process is used, aCMP process 332 is normally included to remove the excessive metalmaterial deposited over the surface 432S of the dielectric layer 432. Ina case that the lift-off process is used and well controlled, a CMPprocess is optional. The deposition of the conductive material of thecap structure 440, e.g., tungsten, is conducted via one of CVD, PVD orALD or other processes that have a good gap-filling property. The goodgap-filling properties of the CVD, PVD, or ALD processes ensure that aninterface 442 between the cap structure 440 and the dielectric layer 432is substantially void-free, such that the CMP slurry for polishing thecap structure 440 or for polishing another interconnect structure overthe cap structure 440 will not permeate or penetrate through theinterface 442 to reach the first interconnect structure 430.

In a further embodiment, the cap structure 440 is not formed within anintentionally formed recess 439. Instead, the cap structure 440 isformed within the unintentionally formed recess 438 on the upper surfaceof the first interconnect structure 430 (FIG. 4A).

In example operation 340, with reference also to FIG. 4D, an upperportion 432U of the dielectric layer 432 is strained, e.g., by beingdoped, so as to cause upper portion 432 to expand in a lateraldirection. This straining is implemented through ion implant of one ormore of dopants germanium “Ge,” silicon “Si,” carbon “C,” nitrogen “N,”phosphorus “P,” or boron “B.” Such modification of upper portion 432Ucauses upper portion 432U of dielectric layer 432 to expand towards (seearrows 436) the interface 442 between the dielectric layer 432 and thecap structure 440 such that a gap in the interface 442, if any, betweenthe dielectric layer 432 and the cap structure 440 is reduced orminimized. In embodiments where there is no gap in the interface 442between dielectric layer 432 and cap structure 440, such expansion ofupper portion 432U results in an increase in the compressive forceexerted by upper portion 432U on cap structure 440. The compressiveforce exerted by upper portion 432U on cap structure 440 as a result ofexpansion of upper portion 432U also occurs when the amount of expansionof upper portion 432U resulting from the doping is larger than the sizeof the gap in interface 442. The ion implant of the dopants iscontrolled to be shallow, such that the modification of the expansionproperty of upper portion 432U of dielectric layer 432 is sufficient toremove any gap at interface 442 between upper portion 432U and metal capstructure 440 and/or increase the compressive force exerted by upperportion 432U on metal cap structure 440 when the two contact each other.Therefore, the depth of the ion implant or the depth of the upperportion 432U is equal to or slightly larger than the depth D1 of therecess 439 in which the cap structure 440 rests.

The modification process of the example operation 340 may be conductedbefore the cap structure 440 formation or after the cap structure 440formation. In an embodiment, if a CMP process is included in theformation of the cap structure 440, the upper portion 432U is modifiedbefore the cap structure 440 formation, such that the interface 442 gapis reduced to prevent the CMP slurry from penetrating to the firstinterconnect structure 430 during the polishing of the excessive metalmaterial of the cap structure 440.

As described herein, the upper portion 432U may also be a separate layeror a plurality of separate layers from the rest of the dielectric layer432. The separate upper portion 432U may be formed directly with asuitable stress (residual stress), e.g., suitable tensile stress,without further modification.

In another embodiment, the whole dielectric layer 432 may be formed witha suitable tensile stress such that the dielectric material tends toexpand to eliminate a gap, if any, between the cap structure 440 and/orthe first interconnect structure 430 and the surrounding dielectricmaterial of the dielectric layer 432.

FIG. 4D(1) shows an alternative or additional embodiment. As shown inFIG. 4D(1), an etch stop layer 433, e.g., of silicon nitride, is formedover the dielectric layer 432. The cap structure 440 is formed alsowithin the etch stop layer 433. The etch stop layer 433 may also beformed with appropriate tensile stress or modified to incorporatetensile stress. The tensile stress within the etch stop layer 433renders a compressive force 437 against the sidewall of the capstructure 440 to eliminate or reduce a gap, if any, between the thesidewall of the cap structure 440 and the surrounding etch stop layer433.

In some embodiments, one of the upper portion 432U or the etch stoplayer 433 may not include tensile stress to render the compressive force436, 437 toward the sidewall of the cap structure 440. That is, one ormore of the upper portion 432U or the etch stop layer 433 may includetensile stress to render compressive force toward the sidewall of thecap structure 440.

In example operation 350, with reference also to FIG. 4E, a secondinterconnect structure 450 is formed within a second dielectric layer452 over the first dielectric layer 432 and contacting the cap structure440. In an embodiment, the second interconnect structure 450 is formedvia a damascene process. In the damascene process, the second dielectriclayer 452 is formed over the first dielectric layer 432 and is patternedto form an aperture 454 exposing the cap structure 440. The secondinterconnect structure 450 is formed within the aperture 454, withexcessive depositions removed through a CMP process 352. The depositionof the second interconnect structure 450 may be achieved using now knownor future developed approaches, e.g., CVD, PVD, plating, or othersuitable process.

In an example, the second interconnect structure 450 is formed of a sameconductive material or a same type of conductive material as the capstructure 440. Two conductive materials are of a same type if they reactsimilarly to the pH characteristic of a CMP slurry. In the case the capstructure is tungsten, the second interconnect structure is tungsten oraluminum, a conductive material that reacts to a CMP slurry similarly totungsten.

For example, in the case that the second interconnect structure 450 istungsten, a mild acidic, e.g., having pH value smaller than 4, CMPslurry is used to polish the second interconnect structure 450 in theCMP operation 352. The CMP slurry also includes oxidizers that oxidizethe metal material of the second interconnect structure 450, e.g.,tungsten. The oxidizer may include oxidizing metal salts such as ferricnitrate, cupric nitrate, zirconyl nitrate, oxidizing metal complexes,oxidizing acids such as ferric chloride, potassium permanganate,potassium ferricyanide, nitric acid, organic peroxides, inorganicperoxides, hydrogen peroxide, peracetic acid, nitric, persulfuric,peracetic and periodic acids, sulfates, potassium iodate and benzoylperoxide and other suitable oxidizers. In an embodiment, the tungstenCMP slurry includes an iron-containing oxidizer, e.g., an iron salt suchas ferric nitrate.

The CMP slurry also includes a plurality of abrasive particles. In anembodiment, the abrasive particles are one or more of carbon, diamondand carbides, nitrides, oxides or hydrated oxides of antimony, aluminum,boron, calcium, cerium, chromium, copper, gadolinium, germanium,hafnium, indium, iron, lanthanum, lead, magnesium, manganese, neodymium,nickel, scandium, silicon, terbium, tin, titanium, tungsten, vanadium,yttrium, zinc, and zirconium, and mixtures thereof, or other suitableabrasive particles. The plurality of abrasive particles may includechemically active metal oxides and chemically inactive oxides.

Optionally, the CMP slurry also includes a corrosion inhibitor.Corrosion inhibitors are helpful to reduce corrosion of cobalt, copperor tungsten or other metals exposed to the CMP slurry. Possiblecorrosion inhibitors include imidazoles, triazoles and benzotriazole.

Optionally, the CMP slurry also includes some surface active agentselected from one or more of sodium hexylsulfate, sodium heptyl sulfate,sodium octyl sulfate, sodium nonyl sulfate, and sodium lauryl sulfate,sodium alkyl sulfate, alkyl sulfonates, quaternary ammonium salts, andnonyl ethers.

The CMP slurry for polishing the excessive film of the interconnectstructure 450 deposition may permeate through materials around aninterface 456 between the second interconnect structure 450 and thesecond dielectric layer 452 or may pass through a gap in the interface456. Because the second interconnect structure 450 and the cap structure440 include the same or a same type of conductive materials, any CMPslurry used for polishing the second interconnect structure 450 thatcomes in contact with cap structure 440 does not damage the capstructure 440 in an uncontrolled manner. For example, the CMP slurry isnormally selected to facilitate oxidizing the second interconnectstructure 450 under a controlled surface conditions including surfacepressure, surface temperature and oxygen supply. With the controlledsurface conditions being removed, the remaining or residual portion ofthe second interconnect structure 450 or the cap structure 440 arerelatively stable with respect to the CMP slurry. For example, thesecond interconnect structure 450 is stable with respect to the pHvalue, of the CMP slurry for the second interconnect structure 450,either acidic or alkaline. Further, the cap structure 440 prevents theCMP slurry used for planarizing the second interconnect structure 450from reaching the first interconnect structure 430.

Not only does the modification of the upper portion 432U of dielectriclayer 432 reduce or eliminate the gap in the interface 442 between thecap structure 440 and the upper portion 432 of the first dielectriclayer 432, the cap structure 440 also improves the electrical connectionbetween the first interconnect structure 430 and the second interconnectstructure 450. FIG. 4F shows various example scenarios of the capstructure 440 improving the electrical connection between the firstinterconnect structure 430 and the second interconnect structure 450.Example A of FIG. 4F shows that the cap structure 440 helps in thescenario that the second interconnect structure 450 misaligns with thefirst interconnect structure 430. Example B of FIG. 4F shows that thecap structure 440 helps in the scenario that the second interconnectstructure 450 includes a much smaller diameter than the firstinterconnect structure 430. Example C of FIG. 4F shows that the capstructure 440 helps in the scenario that the second interconnectstructure 450 includes a much larger diameter than the firstinterconnect structure 430. In all the three example scenarios A, B, andC of FIG. 4F, without the cap structure 440, electrical connectionfailure may occur, especially when the upper surface of the firstinterconnect structure 430 includes an unintentionally formed recess438, as shown in FIG. 4A.

Materials for the first dielectric layer 432, the second dielectriclayer 452 or the additional dielectric layer 432A may include siliconoxide (SiO₂), silicon oxynitride, silicon nitride (Si₃N₄), siliconmonoxide (SiO), silicon oxynitrocarbide (SiONC), silicon oxycarbide(SiOC), silicon mononitride (SiN), silicon oxynitrocarbide (SiONC),phosphosilicate glass (PSG), borophosphosilicate glass (BPSG),combinations thereof, or other suitable dielectric materials. Thedielectric layers may be formed through chemical vapor deposition (CVD),high density plasma CVD, spin-on, sputtering, or other suitableapproaches.

It should be emphasized that the above-described embodiments are merelypossible examples of implementing the techniques, which are merely setforth for a clear understanding of the principles of the disclosure.Many variations and modifications can be made to the embodiments withoutsubstantially departing from the spirit and principles of thedisclosure. The embodiments and the components thereof can also becombined in various ways which are also included in the disclosure.

For example, as shown in FIG. 4G, an etch stop or CMP stop layer 460 isformed between the first dielectric layer 432 and the second dielectriclayer 452. The etch stop layer 460 is formed from silicon nitride “SiN,”silicon oxynitride “SiON,” silicon carbide “SiC,” silicon oxycarbide“SiOC,” or other suitable dielectric materials or combinations thereof.The CMP stop layer 460 protects the underlying first dielectric layer432 from being affected by the processes of forming the secondinterconnect structure 450.

In the embodiment illustrated in FIG. 4G, another cap structure 470 isformed over the second interconnect structure 450. A third interconnectstructure 480, shown as a metal line, is formed over the cap structure470 and connects to the second interconnect structure 450 through thecap structure 470. The cap structure 470 includes a conductive materialdifferent from that of the second interconnect structure 450. The thirdinterconnect structure 480 includes a same or a same type of conductivematerial as the cap structure 470. An upper portion 452U of the seconddielectric layer 452 is modified in accordance with embodimentsdescribed herein, e.g., by being doped, such that upper portion 452Uexpands to reduce the size of or close any gap at an interface 472between the cap structure 470 and the second dielectric layer 452.

The present disclosure may be further appreciated with the descriptionof the following embodiments:

A semiconductor structure embodiment includes a substrate, asemiconductor device over the substrate, a first interconnect structurewithin a first dielectric layer and connecting to a terminal of thesemiconductor device, a first cap structure over the first interconnectstructure and contacting the first interconnect structure, and a secondinterconnect structure over the cap structure and contacting the capstructure. The first cap structure is positioned at least partiallywithin the first dielectric layer.

Another embodiment is directed to a semiconductor structure. Thesemiconductor structure includes a substrate and an conductive viastructure within a dielectric layer over the substrate. An upper surfaceof the conductive via structure is lower than an upper surface of thedielectric layer adjacent to the conductive via structure. Thesemiconductor structure also includes a conductive cap structuredirectly over the conductive via structure. An upper surface of theconductive cap structure is one of substantially at a same level with orhigher than the upper surface of the dielectric layer adjacent to theconductive via structure.

A further embodiment is directed to a method. In the method, a firstmetal structure is formed within a first dielectric layer. An uppersurface of the first metal structure is lower than an upper surface ofthe first dielectric layer that is adjacent to the upper surface of thefirst metal structure. A second metal structure is formed over the uppersurface of the first metal structure. An upper portion of the firstdielectric layer is strained to have a tensile stress.

The various embodiments described above can be combined to providefurther embodiments. All of the U.S. patents, U.S. patent applicationpublications, U.S. patent applications, foreign patents, foreign patentapplications and non-patent publications referred to in thisspecification and/or listed in the Application Data Sheet areincorporated herein by reference, in their entirety. Aspects of theembodiments can be modified, if necessary to employ concepts of thevarious patents, applications and publications to provide yet furtherembodiments.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

The invention claimed is:
 1. A semiconductor structure, comprising: asubstrate; a semiconductor device over the substrate; a firstinterconnect structure within a first dielectric layer and connecting toa terminal of the semiconductor device; a first cap structure over thefirst interconnect structure and contacting the first interconnectstructure, the first cap structure at least partially within the firstdielectric layer and adjacent to an upper portion of the firstdielectric layer, the upper portion of the first dielectric layerincluding an ion implantation different from a lower portion of thefirst dielectric layer that is closer to the substrate than the upperportion of the first dielectric layer; and a second interconnectstructure over the first cap structure and contacting the first capstructure.
 2. The semiconductor structure of claim 1, wherein the upperportion of the first dielectric layer includes a tensile stress againstan interface between the first dielectric layer and the first capstructure.
 3. The semiconductor structure of claim 1, wherein the firstcap structure is at least partially within the upper portion of thefirst dielectric layer.
 4. The semiconductor structure of claim 1,wherein the ion implantation in the upper portion of the firstdielectric layer includes one or more of germanium, silicon, carbon,nitrogen, phosphorus or boron.
 5. The semiconductor structure of claim1, wherein the first cap structure includes a same conductive materialas the second interconnect structure.
 6. The semiconductor structure ofclaim 1, wherein the first cap structure includes a different conductivematerial from the first interconnect structure.
 7. The semiconductorstructure of claim 6, wherein a conductive material of the first capstructure is different from a conductive material of the firstinterconnect structure in reacting to at least one of an acidic solutionor an alkaline solution.
 8. The semiconductor structure of claim 6,wherein one of the first cap structure or the first interconnectstructure is tungsten and another one of the first cap structure or thefirst interconnect structure is one or more of cobalt or copper.
 9. Thesemiconductor structure of claim 1, wherein the first cap structureextends laterally beyond the second interconnect structure at least inone direction.
 10. The semiconductor structure of claim 1, wherein thefirst cap structure includes a different diameter than the secondinterconnect structure.
 11. The semiconductor structure of claim 1,wherein the first cap structure misaligns with the second interconnectstructure.
 12. The semiconductor structure of claim 1, furthercomprising a second cap structure directly over the second interconnectstructure and a third interconnect structure directly over the secondcap structure.
 13. A semiconductor structure, comprising: a substrate; adielectric layer over the substrate, the dielectric layer including anupper portion and a lower portion that is closer to the substrate thanthe upper portion, the upper portion including an ion implantationdifferent from the lower portion and having a tensile stress due to theion implantation; an conductive via structure within the dielectriclayer, an upper surface of the conductive via structure being lower thanan upper surface of the dielectric layer adjacent to the conductive viastructure; and a conductive cap structure directly over the conductivevia structure, an upper surface of the conductive cap structure beingone of substantially at a same level with or higher than the uppersurface of the dielectric layer adjacent to the conductive viastructure.
 14. The semiconductor structure of claim 13, wherein theconductive cap structure extends laterally beyond the conductive viastructure at least in one direction.
 15. The semiconductor structure ofclaim 13, wherein the conductive cap structure misaligns with theconductive via structure.
 16. A structure, comprising: a substrate; afirst dielectric layer over the substrate, the dielectric layerincluding an upper portion and a lower portion that is closer to thesubstrate than the upper portion, the upper portion including an ionimplantation different from the lower portion; a first metal structurewithin the first dielectric layer, an upper surface of the first metalstructure being lower than an upper surface of the first dielectriclayer that is adjacent to the upper surface of the first metalstructure; and a second metal structure over the upper surface of thefirst metal structure, the second metal structure adjacent to the upperportion of the first dielectric layer; wherein the upper portion of thefirst dielectric layer includes a tensile stress against an interfacebetween the first dielectric layer and the second metal structure. 17.The structure of claim 16, wherein the upper portion of the firstdielectric layer includes implanted ions of one or more of germanium,silicon, carbon, nitrogen, phosphorus or boron.
 18. The structure ofclaim 16, further comprising: a third metal structure directly over thesecond metal structure; and a second dielectric layer over the firstdielectric layer and surrounding the third metal structure.
 19. Thestructure of claim 16, wherein the second metal structure includes adifferent conductive material from the first metal structure.
 20. Thestructure of claim 19, wherein a conductive material of the second metalstructure is different from a conductive material of the first metalstructure in reacting to at least one of an acidic solution or analkaline solution.